On the characterization and separation of trapping and ferroelectric behavior in HfZrO FET

N-channel FETs with ferroelectric (FE) HfZrO gate oxide are fabricated, showing steep subthreshold slope under certain conditions. Possible origins of ID-VG hysteresis, the hysteresis vs. subthreshold slope tradeoff, dependence on the bias voltage and temperature and the competition between trapping and FE behavior are reported and discussed. A band of active traps in the ferroelectric layer responsible for charge trapping during device operation is characterized. Transient ID-VG measurements are introduced to facilitate differentiating between trapping and FE behavior during subthreshold slope measurements.