Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n−-GaAs/n-In0.2Ga0.8As/i-GaAs structure

Abstract An n + -GaAs/n − -GaAs/n-In 0.2 Ga 0.8 As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage ( V DS ) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias ( V GS ). The influence of V GS bias on the NDR characteristics is investigated.