Preparation method for GaN-based white-light flip chip

The invention provides a preparation method for a GaN-based white-light flip chip which is free from limitation of a growth substrate. The preparation method adopts a two-substrate-transference process to relieve limitation on the growth substrate by the GaN-based white-light flip chip and at the same time, a semiconductor multi-layer structure is fixed on a transparent permanent support substrate on which a fluorescent powder is doped so that a GaN-based LED flip chip which directly emits white light is obtained and thus a package cost can be reduced significantly and a package yield is improved.