Improved reliability of 1.2kV SiC MOSFET by preventing the intrinsic body diode operation

One of the issues of SiC MOSFET is the reliability of its intrinsic body diode when used as a free-wheeling diode (FWD). The reverse current through the SiC MOSFET may cause Ron degradation over time. A new structure of a SBD-embedded MOSFET has been proposed that prevents the current conduction through its intrinsic body diode. A low RonA 1.2kV class SBD-embedded SiC MOSFET has been realized that improves its reliability by optimizing the SBD structure.