Emission électronique de diodes MIM de type Al-Al203-Au
1990
Anodic oxidization of Al at very low current density in a constant current regime, gives compact Al 2 O 3 layers that allow the fabrication of MIM diodes able to work safely in the quasi-exponential regime of conduction, and to deliver in vacuum high stability electron currents with an electron emission yield in the range 10 −4 -10 −5 . Using a grid as an upper electrode enhances the emission by a large factor
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