Sonic‐Stimulated Change of the Charge Carrier Concentration in n‐CdxHg1–xTe Alloys with Different Initial State of the Defect Structure

Sonic-stimulated change of electron concentration in n-Cd x Hg 1-x Te alloys was investigated. The possible mechanism of the observed effects was analyzed. It was shown that the ultrasonic-induced increase of carrier concentration in n-Cd x Hg 1-x Te alloys could be connected with the activation of donor-like bound defects by acoustic wave. The value of such effect grows with increasing dislocation and low-angle boundary densities in the crystals. The resonance character of the ultrasonic influence was determined.