Feasibility study to investigate diffusion of Fe in Si using a Mössbauer spectroscopic microscope

A prototype Mossbauer Spectroscopic Microscope is applied for the feasibility study of 57Fe impurity diffusion in Si wafers. A 2nm- 57Fe deposited Si wafer is annealed at 430 °C for 1 hour, and subsequently the 1/3 area of the wafer is further grinded with an angle of 6 degrees to the original surface to get a higher depth resolution for the mapping. Subsequently, the mapping images for Fe\(_{\text {sub}}^{\mathrm {0}}\), Fe\(_{\text {int}}^{\mathrm {0}}\), and Fe\(_{\text {int}}^{\mathrm {+}}\) states are measured separately for the two different areas: one area (A) along the grinded surface, and the other (B) along the original wafer surface crossing through the 57Fe-deposition boundary. By integrating the mapping intensity the diffusivity of each Fe component along the two different directions can be evaluated and compared with an average Fe diffusivity in Si, which is measured by EDS mapping data obtained for the same area.