Highly oriented α-alumina films grown by pulsed laser deposition

Abstract Highly oriented thin films of α -alumina have been grown by pulsed laser deposition on Si(111). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). Ablation at temperatures between room temperature and 850°C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented α -Al 2 O 3 films were obtained only at 850°C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) of 0.2°. Further annealing at 1000°C in air for 26 h slightly improved out-of-plane orientation.