Direct Atomic Level Controlled Growth and Characterization of h-BN and Graphene Heterostructures on Magnetic Substrates for Spintronic Applications

Epitaxial multilayer h-BN(0001) heterostructures and graphene/h-BN heterostructures have many potential applications in spintronics. The use of h-BN and graphene require atomically precise control and azimuthal alignment of the individual layers in the structure. These in turn require fabrication of devices by direct scalable methods rather than physical transfer of BN and graphene flakes, and such scalable methods are also critical for industrially compatible development of 2D devices. The growth of h-BN(0001) multilayers on Co and Ni, and graphene/h-BN(0001) heterostructures on Co have been studied which meet these criteria. Atomic Layer Epitaxy (ALE) of BN was carried out resulting in the formation of macroscopically continuous h-BN(0001) multilayers using BCl3 and NH3 as precursors. X-ray photoemission spectra (XPS) show that the films are stoichiometric with an average film thickness linearly proportional to the number of BCl3/NH3 cycles. Molecular beam epitaxy (MBE) of C yielded few layer graphene in azimuthal registry with BN/Co(0001) substrate. Low energy electron diffraction (LEED) measurements indicate azimuthally oriented growth of both BN and graphene layers in registry with the substrate lattice. Photoemission data indicate B:N atomic ratios of 1:1. Direct growth temperatures of 600 K for BN and 800 to 900 K for graphene MBE indicate multiple integration schemes for applications in spintronics.