Photo oxidation and PECVD stacked gate insulator for poly-Si TFTs at 200-300/spl deg/C

We propose the photo oxide and PECVD stacked film for the gate insulator of poly-Si TFTs. The excellent SiO/sub 2/-Si interfaces with the interface trap density 2/spl sim/3/spl times/10/sup +10//cm/sup 2//eV was obtained by photo oxidation using a Xe excimer lamp at 200-300/spl deg/C. The stacked film of 4.3 nm photo oxide and 40 nm PECVD film at 300/spl deg/C without annealing has the excellent interface and the same J-E characteristics of 100 nm PECVD film with 600/spl deg/C anneal, despite the half film thickness.