Influence of Channel Silicon Thickness and Biological Material Permittivity on nTFET Biosensor
2018
This work analyzes the effect of channel silicon thickness for different biological materials on n-type Tunnel-FET (nTFET) working as a biosensor. The bioelement materials are simulated using different dielectric permittivity materials ($\varepsilon$) localized at the drain underlap region. The results of this work show that using the ambipolar current of the Tunnel-FET it presents better sensitivity. The best results for TFETs biosensor were obtained for the drain underlap of 15 nm and channel silicon thickness of 5 nm.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
16
References
2
Citations
NaN
KQI