Preparation and photoluminescence of Nd-doped layers on (001) KTiOPO4 surface

Abstract The thermal annealing in air of amorphous Nd 2 O 3 films deposited on (001) KTiOPO 4 (KTP) leads to the formation of a crystalline NdPO 4 layer preferentially oriented as (100) NdPO 4 (001) KTP and to Nd diffusion into KTP. The 4 F 3/2 level of Nd 3+ has been excited with a Ti-sapphire laser and the 4 F 3/2 → 4 I 11/2 (1030–1100 nm) and 4 F 3/2 → 4 I 13/2 (1300–1400 nm) emissions of Nd 3+ have been observed. The contributions of diffused Nd 3+ and NdPO 4 to the photoluminescence are discussed.