Design, Fabrication and Test of Dual Redundant TSV Interconnection for Millimeter Wave Applications

TSV technology enables small size, high density, high integration, and high performance 3D integration. Currently, its application or even commercialization is occurring in Memory IC, high performance logic IC, and MEMS, microwave and millimeter wafer application will become an emerging field in coming years with booming of the 5G, millimeter wave radar. For high frequency application, TSV interposer based 2.5D/3D integration is a competitive choice. This paper proposes a dual redundant TSV interconnection design in High resistivity Si interposer for Millimeter Wave Applications. To verify the feasibility of this design, a set of test structures that can work at millimeter wave is designed, which is made of dual redundant TSV interconnection linked CPW lines. Process is developed for High resistivity Si TSV interposer and Test structures are fabricated and tested, the results show that the insertion loss of the test structure with dual redundant TSV interconnect is <1.57 dB@40GHz.