Evaluation method and semiconductor wafer of semiconductor wafer

PROBLEM TO BE SOLVED: To provide a new evaluation method of evaluating a semiconductor wafer with a polished surface by detecting defects caused by processing and surface adhesion foreign matter.SOLUTION: The evaluation method includes evaluating a semiconductor wafer, based on a measurement result 1 obtained by causing incident light to enter a polished surface of a semiconductor wafer from one incident system and receiving, with a first light-receiving system, radiant light radiated by the incident light reflected or scattered on the polished surface, a measurement result 2 obtained by receiving the radiant light with a second light-receiving system, and based on a measurement result 3 obtained by receiving the radiant light with a third light-receiving system, detecting, as bright spot, abnormality types selected from a group consisting of defects caused by processing and surface adhesion foreign matter present on the polished surface of the semiconductor wafer. The first light-receiving system, the second light-receiving system and the third light-receiving system have at least one different from each other, selected from a group consisting of light-receiving angle and polarization selectivity.SELECTED DRAWING: None