Hot carrier injection effect on threshold voltage of NMOSFETs

In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (V Th ) is examined. The purpose of this work is to predict V Th degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. V Th extraction is conducted using Constant Current (CC) threshold voltage method.