A light emitting device, method of manufacturing the light emitting device and a light emitting device package
2010
A light emitting device according to an embodiment, the first conductive semiconductor layer, a light emitting structure including the first conductive semiconductor layer an active layer, a second conductive semiconductor layer on the active layer above the active layer; Wherein the bonding layer into contact with the upper surface of the first conductive type semiconductor layer; A first electrode in contact with the upper surface of the first conductive type semiconductor layer and the bonding layer; And a second electrode electrically connected to the second conductive type semiconductor layer.
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