Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences in nitrogen doping efficiency were clarified in facet and step-flow regions. In case for growth in the macro-step bunching mode, doping fluctuation and void formation were observed in the macro-step bunching region. Propagation of threading screw dislocations (TSDs) in the grown crystal was also investigated by synchrotron X-ray topography.