ICP-RIE 방법에 의한 Si 식각 특성 개선에 관한 연구

In this paper, deep trench etching of silicon was investigated as a function of source power (300~600 W), DC bias voltage (0~-100 V), O2 addition (0~29%). As increasing the RF source power from 300 W to 700 W, the etch rate was increased from 3.52 ㎛/min to 7.07 ㎛/min. The addition of O₂ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the O₂ gas addition of 12%. The selectivity to PR was 65.75 with O₂ gas addition of 24%. At DC bias voltage of -40 V and C₄F? gas flow rate of 30 seem, We were able to achieve etch rate as high as 5.25 ㎛/min with good etch profile.