Toggle magnetoresistance random access memory based on magnetostatically coupled bilayers

A new scheme of toggle magnetoresistance random access memory (MRAM) based on magnetostatically coupled (MSC) bilayers without antiferromagnetic coupling is investigated. Analysis shows that the toggle-MRAM operation and necessary storage lifetime can be achieved by choosing an appropriate aspect ratio for MSC bilayers having reasonable area and thickness. The attenuation factor defined as the ratio of the effective MSC field to the demagnetizing field is found to be essential to obtain the toggle-mode operation.