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Investigation of SACVD-Based STI Process on Electrical Characteristics of Nanoscale NMOSFETs
Investigation of SACVD-Based STI Process on Electrical Characteristics of Nanoscale NMOSFETs
2010
Hong Lin
San-Lein Wu
C. W. Kuo
Y. T. Huang
S. J. Chang
D. G. Hong
Chung-Yu Wu
Cheng-Tung Huang
O. Cheng
Keywords:
Nanotechnology
Nanoscopic scale
Materials science
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