Fields of deformation anisotropy exploration in multilayered (In,Ga)As/GaAs structures by high-resolution X-ray scattering

The results of investigation of In 0.3 Ga 0.7 As/GaAs superlattice by high-resolution X-ray scattering are presented. The influence of lattice distortion on diffraction curves (DC) were analyzed with dynamical diffraction theory. It allowed to explain azimuth dependence of experimental diffraction curves. Anisotropic changes in the shape of InGaAs lattice unit cell were shown and measured. The influence of smooth borders between hetero-layers were analyzed. Comparative analysis of different gradient functions on the hetero-border influence on diffraction curves was done. Parameters of heterojunction in investigated samples were determined with the help of DC modelling.