Effect of hydrogen on electrical transport properties of polycrystalline CulnTe2 thin films

The effect of molecular hydrogen on the electrical transport properties of p-type CulnTe2 films was studied by exposing the films at high pressures (up to 700 psi). It was observed that the Hall coefficient increased initially with the increase of pressure up to 500 psi and then started decreasing. The mobility was found to increase with pressure of the gas. The results are explained in terms of a grain-boundary scattering mechanism and in terms of donor action provided by hydrogen diffusion into the thin film.