Расчет однородности толщин эпитаксиальных слоев, полученных методом молекулярно-лучевой эпитаксии из сублимационного источника

Model calculations have been carried out of the epitaxial layer thickness distribution over the substrate area for a molecular beam formed by a vacuum sublimation source. The calculated results are in good agreement with the experimental data on silicon molecular beam epitaxy.