Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors

Abstract A novel type of GaInAsP/InP surface emitting device is investigated in this work, consisting of an InP p–n junction with a GaInAsP quantum well placed on the n-side of the junction within the depletion region. The device is grown between a bottom GaInAsP/InP distributed Bragg reflector (DBR), with a reflectivity of less than 90%, and top Si 3 N 4 /SiO 2 dielectric DBR with a reflectivity of 99%. Therefore, the device is an ultra-bright surface emitter in a quasi-vertical resonant cavity. Electrical contacts are diffused into the active layers and hence the excess electrons and holes are injected longitudinally; therefore, current does not have to pass through the DBR layers.