Gate Voltage Fluctuation Reduction in Fast-switching Operation for Uninterruptible Power System with SiC-MOSFET

A low noise gate drive architecture for uninterruptible power systems with SiC-MOSFET was developed. An active miller clamp circuit with dumping resistance was applied to the gate drive circuits to reduce gate voltage fluctuation caused by common source inductance in fast-switching operation. As a result, a 200 V / 20 kVA UPS achieves high efficiency of 93.7%.