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70 nm Damascene-Gate MOSFETs with Minimal Polysilicon Gate-Depletion
70 nm Damascene-Gate MOSFETs with Minimal Polysilicon Gate-Depletion
2001
Hussein I. Hanafi
R. Arndt
Diane C. Boyd
Wesley C. Natzle
A. Ticknor
Keywords:
Analytical chemistry
Materials science
Electronic engineering
Boron
Annealing (metallurgy)
Ring oscillator
Electrode
Copper interconnect
Microelectronics
polysilicon gate
cmos process
Fabrication
Correction
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