Integration of low temperature PECVD deposited silicon oxides with advanced packaging

In this study, low temperature TEOS oxides were deposited by plasma enhanced chemical vapor deposition (PECVD) at 100°C, 150°C and 180°C respectively. After deposition, physical characterization was carried out by FTIR for chemical bonding condition, AFM for surface roughness, Auger electron spectroscopy for chemical composition, ellipsometer for refractive index, and DHF for wet etching rate measurement. All characterization data shows that the TEOS oxide deposited at 100°C is comparable with the higher temperature deposited TEOS oxide. Integration with TSV technology to act either as liner dielectrics for Cu Via was performed as well to confirm the feasibility of these low temperature deposited TEOS oxide to be integrated in TSV technology in terms of process. E-test for blind TSV leakage and capacitance was also carried out and compared. The e-test data indicates that TEOS oxide deposited at 100°C has exhibited comparable electrical performance as 150°C and 180°C deposited TEOS oxide.