Reliable prediction of deep sub-quarter micron CMOS technology performance

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 /spl mu/m technology and applied to 0.13 /spl mu/m technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data.