The Research and Application of the Full Silicon Carbide Power Module in High-Power Inverter

The development of the third generation wide band gap semiconductor technology contributes to the application of the full silicon carbide power module in all kinds of power electronics devices due to its advantages of high switching frequency, low switching losses and high voltage class. With the progress of more-electric-aircraft (MEA), the application of full silicon carbide power module can improve the power density and efficiency of aeronautical inverters. On the basis of the double pulse experiment, the switching characteristics of the full silicon carbide power module is compared with the traditional silicon IGBT power module, and the switching losses of the full silicon carbide power module is analyzed. An aeronautical inverter experimental platform based on the full silicon carbide power module is established. The output voltage, current, radiator temperature rise and the overall efficiency are tested and analyzed, which contributes to the promotion and application of the full silicon carbide power modules in the aeronautical inverter.