CV profiling on p-p- and n-s.i.-In0.53Ga0.47As/InP heterointerfaces

Abstract Our investigations on LPE grown p-p- and n-s.i.-In 0.53 Ga 0.47 As/InP heterointerfaces by means of CV profiling and magnetoresistivity measurements are presented. Measurements on p-p-heterojunctions indicate a valence band offset of Δ E v = 0 eV. Measurements on n-s.i.-het-erojunctions were analysed by Rhoderick's method. The results show a large scatter in interface properties across a wafer. CV profiles indicate an electron accumulation layer at the n-s.i.-InGaAs/InP interface which develops into a two-dimensional electron gas at lower temperatures (Shubnikov-de Haas oscillations).