A method for forming a protective coating for an encapsulated semiconductor device

A first semiconductor substrate having at least one integrated semiconductor device is provided. A lift-off layer is formed on a main surface of the first semiconductor substrate. The lift-Offe layer is patterned to form openings in the lift-off layer, which are arranged on both sides of a first part of the lift-off layer. The first substrate is bonded to a second substrate through an interconnection structure to form an assembly, wherein the main surface of the first semiconductor substrate is exposed. wherein a first portion of the parylene coating is supported by the first part of the lift-off layer exposed surfaces of the assembly are coated with a parylene coating. The first part of the parylene coating is selectively removed using a lift-off technique which removes the first part of the lift-off layer. The lift-off technique is performed after bonding the first substrate to the second substrate.