Method for manufacturing nickel sulfide thin film

The present invention relates to a method for manufacturing a nickel sulfide thin film using an atomic layer deposition method, comprising the steps of: a) loading a substrate into a deposition chamber; b) absorbing a nickel precursor represented by chemical formula 1 on the substrate by an atomic layer deposition method; c) removing by-products except for the nickel precursor absorbed on the substrate; d) introducing a sulfur source into the deposition chamber and subjecting the sulfur source to an exchange reaction with the nickel precursor absorbed on the substrate to form a nickel sulfide thin film on the substrate; and e) removing by-products except for the nickel sulfide thin film. In the case of manufacturing a nickel sulfide thin film by the method for manufacturing a nickel sulfide thin film using an atomic layer deposition method according to the present invention, it is possible to form a uniform metal layer, the thickness of which can be easily adjusted, and to relatively decrease the temperature for forming the metal layer on the substrate.