Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10 -9 Ω· cm 2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si 0.7 Ge 0.3 with a chemical boron-doping density of 2 × 10 21 /cm 3 . This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.