Antiferromagnetism in Cr3Al and relation to semiconducting behavior
2012
Antiferromagnetism and chemical ordering have both been previously suggested as causes of the observed semiconductorlike behavior in Cr3Al. Twofilms of Cr3Al(001)/MgO(001) were grown under different conditions to achieve different types of chemical ordering and electronic properties: one X-phase structure (semiconducting) and one C11b structure (metallic). The films were investigated by x-ray and neutron diffraction. Both films show
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