Tin Oxide-Silicon Dioxide-Silicon MIS Solar Cells

This communication presents the results obtained in tin oxide-silicon dioxide-n type silicon schottky barrier solar cells. Samples were prepared in a two-zone furnace where the thermal oxidation of the wafer and the SnO2 deposition were carried out without further handling. The tin oxide layer was grown using a gas transport method in an open tube. The characteristic parameters of the solar cell performance gave the following results: short circuit current density = 21 mA/cm2, open circuit voltage = 550 mV.