A NiTiNOL membrane controlled by an external heat source

The NiTiNOL diaphragm, under two geometries, were simulated on a Silicon wafer and controlled by an external heat source. As the substrate bottom wall heats and conducts heat, the thermal expansion raises the thin layer which can be used as an actuator. The case of heat source applied on the top walls was also considered. The simulations were realized by means of the mechanical and thermal properties of materials. A comparison among the performance of the diaphragm based on the geometries with a plane layer, a layer with a primary boss, and finally with primary and secondary bosses is presented. Each process was simulated in COMSOL Multiphysics. The distribution of deformation using bosses is similar to the analyzed cases using pressure instead of heat. The maximum obtained displacement for NiTiNOL is of approximately 2.5 micrometers at 343°K, at the same conditions, Silicon case reaches 0.9 μm. The diaphragm behavior is also compared with the cases of Silicon and Cu-Al-Ni. Our interest in the development of MEM actuators only controlled by external heat sources is due to several reasons. At first, because these clean energy sources sometimes reaches high density values, but they have not been well-spent. The most of MEMS thermal actuators need a current flow to heat the MEM device, by means of the Joule effect, and produce the corresponding thermal expansion. In this paper, the displacement depends on the external source, in accordance with the mechanical and electrical properties of the used materials.