Determination of the charge density distribution of crystals by energy filtered CBED

Determination of the charge density distribution of crystals by energy filtered CBED. Recently, a new method was developed for the determination of structure factors from energy filtered diffraction patterns. This technique has been applied to Si. Low-index structure factors have been determined up to the (444) reflection. The results are compared to results available in the literature. Different techniques have been applied to obtain the structure factors, such as the intersecting Kikuchi-line technique, the Critical Voltage method, an inversion method, and the X-ray Pendellosung technique. A deformation charge density distribution can be determined from the experimentally obtained structure factors which shows the covalent bonds in Si. From the accurate determination of the (222) structure factor follows that an accurate determination of charge density distributions of intermetallic compounds is possible if Debye-Waller factors are known. The Debyc-Waller factors can be determined from high-index reflections utilising the same method.