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The TDDB Study Of Post-CMP Cleaning Effect for L40 Direct Polished Porous Low K Dielectrics Cu Interconnect
The TDDB Study Of Post-CMP Cleaning Effect for L40 Direct Polished Porous Low K Dielectrics Cu Interconnect
2010
Chia-Lin Hsu
Welch Lin
Chun-Wei Hsu
Jen-Chieh Lin
Teng-Chun Tsai
Chien-Chung Huang
J.Y. Wu
Dung-Ching Perng
Keywords:
Dielectric
Time-dependent gate oxide breakdown
Porosity
Electronic engineering
Materials science
Interconnection
Engineering physics
Correction
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