Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTS

Abstract The oxygen-related defects in undoped Al 0.3 Ga 0.7 As (p-type) were characterized by deep-level transient spectroscopy (DLTS). We prepared pn + -junction diodes by the metal organic chemical vapor deposition (MOCVD) technique in order to study both majority- and minority-carrier emission properties of the defects. Under majority-carrier filling condition, just one hole-emission peak (E) was observed around 450 K in addition to DX centers in the n + -layer. When the minority-carrier injection pulse was applied, an electron-emission peak (C) appeared around 300 K in accordance with the disappearance of peak E. The defect related to the peak E acts as an efficient recombination center which dominates the current–voltage characteristics of the diodes.