An Analysis and Design of 0.3-10 GHz Medium Power Amplifier using 0.5 μm GaAs PHEMT Technology

This paper describes a new design approach of a broadband medium power amplifier (MPA). Conventionally, the design approach of MPA requires extensive transistor level analysis and simulation. The post-fabricated analysis approach is used in the broadband MPA design. The MPA operates from 0.3-10 GHz with gain from 3-13 dB with total current consumption of 106.25 mA. This is achieved by using standard shunt feedback amplifier. The estimated total area of the complete MPA without probe pads is 1200 μm x 850 μm.