Bipolar resistive random access memory and preparation method thereof

The invention provides a bipolar resistive random access memory and a preparation method thereof. The bipolar resistive random access memory includes a substrate, a lower electrode which is composited with the upper surface of the substrate, a rectification function layer which is composited with the lower electrode, a graphene layer which is composited with the rectification function layer, a resistive dielectric layer which is composited with the graphene layer, and an upper electrode which is composited with the resistive dielectric layer, wherein the rectification function layer is formed by one or more of Al203, TiO2 and MgO. Compared with the prior art, the rectification function layer in the bipolar resistive random access memory can play a role in tunneling rectification and realize bidirectional rectification, and can also effectively restrain the crosstalk misreading phenomenon between adjacent units in a resistive random access memory array; and at the same time, because of existence of the graphene layer, the device performance is improved; the reset current is reduced; the response speed is improved; and the power consumption is reduced.