Resistively coupled single-electron transistor using tunnel gate resistor

Abstract A resistively coupled single-electron transistor (R-SET) was fabricated using a modulation-doped heterostructure and metal Schottky gates, and measured at low temperature. Currents of R-SET with tunnel gate resistor were calculated using the orthodox theory. It is shown that the R-SET with tunnel gate resistor has quite similar properties to the originally proposed R-SET.