Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristics

A TaO"x layer as thin as ~1nm was inserted at the interface between top Pt electrode and TiO"2 as a restive switching dielectric to find a clue for a control of the resistive switching characteristics. By inserting an ultrathin TaO"x layer, a marked change in initial resistance state and an improvement of endurance property were observed. These results can be interpreted in terms that such an ultrathin TaO"x layer works as an oxygen reservoir.