Пористые структуры на основе карбида кремния для фотоэлектрических преобразователей

A method for producing porous silicon carbide by carbonization of porous silicon is considered. The surface morphology and phase composition of porous silicon carbide layers obtained by diffusion of carbon from the gas phase into the porous silicon layer are investigated. Diffusion and absolute reflection spectra of porous silicon carbide and porous silicon samples are obtained. A study of the specific surface resistance and lifetime of excess charge carriers in porous silicon carbide was carried out. Using of porous silicon carbide in photovoltaic cells to increase their efficiency is shown.