Morphology and Photoelectronic Properties of the InAs/GaAs Surface Quantum Dots Grown by Vapor Phase Epitaxy

Abstract : A comparative study of the surface morophology photoluminescence and photoelectric properties of the heterosniwtures with InAs, GaAs quantum dots (QDs) grown on the surface and uncovered by etching away the GaAs cladding layer has been carried out. The red shift of the ground transition energy in the surface QDs compared to the QDs embedded into the GaAs matrix has been shown to be related not only to relaxation of the elastic strain but also to the differences in the size and shape of the nanoclusters.