Beam Techniques for Fabrication of Microwave Integrated Circuits.

Abstract : This report discusses the progress made during the third year of the program, 4 January 1972 through 3 January 1973, which was devoted to conducting ion beam focusing experiments and to performing system modifications, as they were required, to improve the quality (e.g., stability) of the focused ion beam. The development of the tiny beam system progressed to the point at which fine focusing with low noise was demonstrated. In addition, the focused beam was programmed to write a simple device structure (resistor) in silicon with boron ions and to expose narrow (3.5 micrometer wide) lines in resist with a focused beam of helium ions. Further experimental investigation and system development will be required to establish the edge sharpness of tiny beam implanted junctions and to achieve ion-beam registration, which are both necessary for state-of-the-art device processing. (Author)