Laser maskless formation of submicrometer periodic relief gratings on AIIIBV semiconductor wafers by combination of holographic and surface electromagnetic wave generation methods
1996
The review of experimental investigations on maskless formation of submicron periodic relief structures on A III B V semiconductor surfaces (period d equals 230 - 800 nm), carried out in the Scientific Research Center for Technological Lasers of Russian Academy of Sciences during the last two years, is presented.
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