Laser peeling method of gallium nitride-based epitaxial film

The invention discloses a laser peeling method of a gallium nitride-based epitaxial film, comprising the following steps: a plurality of layers of gallium nitride-based epitaxial films grow on a sapphire substrate; the layers of gallium nitride-based epitaxial films are isolated by a scribing groove to form a gallium nitride-based unit component; the scribing groove scribes through till the surface of the sapphire substrate; protection materials are filled in the scribing groove; a metal layer is used as an interface layer, the gallium nitride-based epitaxial film is connected to the high heat-conducting and electricity-conducting substrate; laser facula is shaped so that the facula projected at the interface position of the sapphire substrate and the gallium nitride-based epitaxial film is processed to be a graphical facula array which can effectively reduce and restrain the stress of laser shock wave; and by adopting the graphical facula array which irradiates at the interface position of the sapphire substrate and the gallium through the sapphire, the gallium at the interface position is decomposed so that the gallium nitride-based epitaxial film is peeled off the sapphire substrate. The method realizes laser peeling with low damage, greatly reduces the damage of the gallium nitride-based epitaxial film and improves the good product rate of chips.