Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers

Steep retrograde doping devices were fabricated using undoped epitaxial Si channels with inserted oxygen layers. The effects of boron transient enhanced diffusion (TED) on threshold voltage (Vth) mismatch were investigated. Suppression of boron TED was effective for reducing V th mismatch of steep retrograde doping devices as well as flat doping profile devices.