Study on 600V Super Junction Power MOSFET Optimization and Electric Characteristics Using Deep Trench Filling

Power MOSFET device driven by voltage is designed as a power switching device in large capacity power supply system. It is also widely used in converters and motor controllers. However, the on-resistance characteristic during the increase of breakdown voltage is a problem. The on-resistance of super junction power MOSFET is lower by 1/3 than existing planar power MOSFET on 600V basis. This study designed 600V planar MOSFET/super junction MOSFET and compared their operation characteristics for lower on-resistance and higher breakdown voltage. The result suggested that super junction power MOSFET is better than planar power MOSFET by having 40% better on-state voltage drop performance.